Post-doc offer : Ultimate quality 3C-SiC single crystalline wafers for power electronics applications; a proof of concept

SIMaP -Science et ingénierie des matériaux et des procédés (Science and Engineery of Materials and Processes) is a multidisciplinary laboratory gathering about 200 people from chemistry, physics, materials and fluids mechanics. It is one of the leading laboratory for physical metallurgy and thermodynamics, architectured materials, as well as materials for microelectronics, electronics and energy applications. The postdoctoral researcher will work at SIMaP Lab in Grenoble, in the heart of an outstanding scientific environment.

You will implement a solution growth process, based on the Travelling Solvent Method (TSM) by applying a temperature gradient between a source and a seed crystal.

• Design the growth cell (geometry and temperature distribution) using numerical simulation
• Design the growth cell (geometry and temperature distribution) using numerical simulation.
• Verify the feasibility of the concept using pure silicon as a solvent in the 1500-2000°C range.
• Optimize growth rate by exploring alle the parameter space.
• Characterize thick films using a combination of different techniques (XRD, SEM, Raman spectrometry, selective etching of defects, etc.).

• PhD degree in materials science, materials chemistry with some background in crystal growth, characterization of crystals, multi-physics numerical simulation
• Excellent experimental skills.
• Excellent writing skills, ability to report, publish and promote the results
• Good knowledge of English both spoken and written.
• Excellent communication and organizational skills.
• Interpersonal skills, problem-solving, rigor, initiative and teamwork abilities